Monitoring of minimum features on a substrate

Details Monitoring of minimum features on a substrate Monitoring of minimum features on a substrate

1996-06-26

1998-08-04

Pham, Hoa Q.

Optics: measuring and testing

By polarized light examination

With light attenuation

430 5, G01B 1100

Patent

active

057902542

ABSTRACT:
A method of measuring bias of a minimum feature in a lithographic process uses creating an array of elements having a width and space corresponding to the minimum feature, and a length. The length change of the array element resulting from image shortening effect from a lithographic process is measured and the bias of the element in the width dimension is calculated. A test site having groups of array elements is described which facilitate automatic bias measurement of array lengths and separations and especially allows the use of non SEM metrology tools which is otherwise incapable of measuring the minimum feature width being monitored. Measurements by this method and test site used to control lithographic processing of substrates in manufacturing, routine monitoring of product substrates and lithographic tool and process for minimum bias, are disclosed.

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patent: 5418613 (1995-05-01), Matsutani
R. Dellaguardia, et al., "Comparison of Image Shortening Effects in X-ray and Optical Lithography" 1994 Beams Conference, J. Vac. Science Tech. B, to be published Nov./Dec. 1994.
D. S. Goodman, et al. "High Spatial Frequency MTF Measurement Scheme" IBM Technical Disclosure Bulletin, V. 25, #10, pp. 5056-5057, Mar. 1983.
C. P. Ausschnitt, Electrical Measurements for Characterizing Lithography VLSI Electronics, Microstructure Science, vol. 16, pp. 320-355, 1986.
T. A. Brunner, et al., "Quantitative Stepper Metrology Using the Focus Monitor Test Mask" SPIE Proceedings, San Jose, Ca., vol. 2197, Mar. 1994.

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