Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Patent
1996-01-29
1998-08-11
Chapman, Mark
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
438 8, 438 9, 438 16, 438694, 438697, H01L 21205
Patent
active
057926735
ABSTRACT:
On an insulating film covering a silicon substrate formed with desired circuit elements, a first Al wiring layer is formed and at the same time a test pattern is formed by using the same Al layer. The test pattern has a same thickness as the first Al wiring layer and has a shape with different line/space ratios at a plurality of positions. A coated film is formed over the wiring layer and test pattern, and etched back. During this etch-back, the border position between the coated film at the space area in the test pattern and the exposed insulating film is optically detected to judge the etching amount, in accordance with previously measured correlation data between the border position and an etching amount. Thus, discrimination can be done whether the etching amount is optimum or not. A method of manufacturing a semiconductor device is provided which can easily judge through optical non-destructive inspection whether the etching amount is optimum or not.
REFERENCES:
patent: 4863548 (1989-09-01), Lee
Chapman Mark
Yamaha Corporation
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