Monitoring apparatus for plasma process

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

20429832, 20419213, 204406, 118712, 118713, C23C 14100

Patent

active

060802928

ABSTRACT:
A monitoring apparatus for plasma process of the present invention detects the change of conditions of a plasma processing apparatus to omit the defective products in the earlier stage of the process and omits the unnecessary steps to decrease the manufacturing cost. The monitoring apparatus is to monitor the change of conditions of the plasma processing apparatus and comprises a detecting means for detecting power supplied to the plasma processing apparatus, and a detecting means for detecting the change of conditions of the plasma processing apparatus from the change of power detected by the detecting means.

REFERENCES:
patent: 5556549 (1996-09-01), Patrick et al.
patent: 5576629 (1996-11-01), Turner et al.

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