Monitor for oxygen concentration in aluminum-based films

Measuring and testing – Gas content of a liquid or a solid – By vibration

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118712, 427 8, G01N 2712

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active

043488862

ABSTRACT:
The ratio of oxygen concentration to aluminum concentration in an aluminum film deposited in a vacuum chamber on an integrated circuit (IC) substrate is monitored by measuring either the resistivity or the resistance of a film of aluminum being simultaneously deposited film on a monitor substrate. The monitor substrate is arranged within the vacuum chamber such that the film of aluminum thereon has a concentration ratio of oxygen to aluminum that is significantly higher than the concentration ratio of oxygen to aluminum flux in the IC substrate film. This is done by reducing the aluminum flux or increasing the oxygen flux on the monitor substrate film. A measurement of the resistivity (or resistance) of the monitor substrate aluminum film is indicative of the resistivity and thus the oxygen concentration of the IC film.

REFERENCES:
patent: 4121537 (1978-10-01), Maruyama et al.
patent: 4302498 (1981-11-01), Faith, Jr.
E. M. Da Silva et al., "Fabrication of Aluminum Oxide Films," IBM Technical Disclosure Bulletin, vol. 4, No. 6, pp. 6-7, Dec. 1961.
A. Kubovy et al., "The Influence of Residual Gas Pressure on the Stress in Aluminum Films," Thin Solid Films, 42, pp. 169-173, 1977.

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