Monitor for impurity levels in aluminum deposition

Details Monitor for impurity levels in aluminum deposition Monitor for impurity levels in aluminum deposition

1982-10-22

1984-04-03

Smith, John D.

Coating processes

Measuring, testing, or indicating

427 90, 427 91, 29574, H01L 2124

Patent

active

044407998

ABSTRACT:
A method of monitoring the contact resistance in a film of an aluminum-based metal deposited on a silicon substrate in a vacuum chamber is provided wherein a reference wafer containing contact resistance measurement circuits is utilized. A significant number of contact resistance measurements is utilized to determine the impurity level in the film and/or to predict the post alloy contact resistance distribution from pre-alloy values.

REFERENCES:
Fang et al., Solid-State Electronics, vol. 22, pp. 933-938, (1979).
McNeil, J. Electrochem. Soc., vol. 116, No. 9, pp. 1311-1312, (1969).
Ghate, Thin Solid Films, vol. 83, pp. 195-205, (1981).
Berger, Journal of the Electrochem. Soc., vol. 119, No. 4, pp. 507-514.
Ting et al., Solid-State Electronics, vol. 14, pp. 433-438, (1971).
Chang, J. Electrochem. Soc., vol. 117, No. 3, pp. 368-372, (1970).

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