Monitor and control of silicidation using fourier transform...

Details Monitor and control of silicidation using fourier transform... Monitor and control of silicidation using fourier transform...

2005-02-01

2005-02-01

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S005000, C438S682000, C118S663000, C118S688000

Reexamination Certificate

active

06849469

ABSTRACT:
Real-time analysis and control of a semiconductor silicidation process. The architecture includes system and methods for monitor and control of a silicidation process during rapid thermal anneal. An FTIR system analyzes selected and/or random regions where silicidation is occurring, and signals the process control system to control the process according to the status of the analyzed silicide formations.

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R.J. Schreutelkamp, et al. “In situ emissivity measurements to probe the phase transformations during rapid thermal processin Co. silicidation” Appl. Phys. Lett. vol. 61, INo. 19, pp. 2296-2298 (Nov. 9, 1992).*
Youngjae Kwon, Chongmu Lee, Silicidation behaviors of Co/Ti/ and Co/Hf bilayers on doped polycrystalline Si substrate, Materials Science & Engineering, Jul. 19, 1999.

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