Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1992-03-10
1994-04-05
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272551, C23C 1634, C23C 1642
Patent
active
053003225
ABSTRACT:
A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.
REFERENCES:
patent: 2920006 (1960-01-01), Yntema et al.
patent: 3117846 (1964-01-01), Chao
patent: 3373051 (1968-03-01), Chu et al.
patent: 3477872 (1969-11-01), Amick
patent: 3814625 (1974-06-01), Lewin et al.
patent: 3982048 (1976-09-01), Zlupko
patent: 4162345 (1979-07-01), Holzl
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4279947 (1981-07-01), Goldman et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4369233 (1983-01-01), van Schaik
patent: 4404235 (1983-09-01), Tarng et al.
patent: 4431708 (1984-02-01), Carver et al.
patent: 4501769 (1985-02-01), Hieber et al.
patent: 4535000 (1985-08-01), Gordon
patent: 4580524 (1986-04-01), Lackey, Jr. et al.
patent: 4598024 (1986-07-01), Stinton et al.
patent: 4605566 (1986-08-01), Matsui et al.
patent: 4610896 (1986-09-01), Veltri et al.
patent: 4614689 (1986-09-01), Ikeda et al.
patent: 4617237 (1986-10-01), Gupta et al.
patent: 4654228 (1987-03-01), Komiyama
patent: 4684536 (1987-08-01), Zega
patent: 4699825 (1987-10-01), Sakai et al.
patent: 4713259 (1987-12-01), Gartner et al.
patent: 4720395 (1988-01-01), Foster
patent: 4741925 (1988-05-01), Chaudhuri et al.
patent: 4756927 (1988-07-01), Black et al.
patent: 4758451 (1988-07-01), van den berg et al.
patent: 4780372 (1988-10-01), Tracy et al.
patent: 4794019 (1988-12-01), Miller
patent: 4800137 (1989-01-01), Okuno et al.
patent: 4803127 (1989-02-01), Hakim
patent: 4810530 (1989-03-01), D'Angelo et al.
patent: 4818626 (1989-04-01), Werdecker et al.
patent: 4820562 (1989-04-01), Tanaka et al.
patent: 4822697 (1989-04-01), Haluska et al.
patent: 4830891 (1989-05-01), Nishitani et al.
patent: 4843040 (1989-06-01), Oda et al.
patent: 4861623 (1989-08-01), Ueki et al.
patent: 4869931 (1989-09-01), Hirooka et al.
patent: 4876119 (1989-10-01), Takeda et al.
patent: 4888142 (1989-12-01), Hayashi et al.
patent: 4892792 (1990-01-01), Sarin et al.
patent: 4911992 (1990-03-01), Haluska et al.
Webster's II New Riverside University Dictionary 1984.
A. C. Airey et al, "Pyrolytic Silicon Nitride Coatings," Proc. Brit. Ceram. Society, 305-320 (1972-73).
J. J. Gebhardt et al, "Chemical Vapor Deposition of Silicon Nitride," J. Electrochem. Soc.: Solid-State Science and Technology, 1578-1582 (Oct. 1976).
F. Galasso et al, "Pyrolytic Si.sub.3 N.sub.4," Journal of the American Ceramic Society-Discussions and Notes, 431 (Aug. 1972).
T. Hirai et al, "CVD Fabrication of IN-Situ Composite of Non-Oxide Ceramics," Tailoring Multiphase & Composite Ceram., Proc. 21st Univ. Conf. on Ceram. Sci., Penn St. U., Plenum Press, N.Y. 1986.
T. Hirai, "SVD of Si.sub.3 N.sub.4 and Its Composites," Emergent Process Meth. for High Tech. Ceram., N. Carolina St. U. ed. by R. F. Davis, et al, Plenum Press, N.Y. 1984.
R. A. Tanzilli et al, Processing Research on Chemically Vapor Deposited Silicon Nitride-Phase 3, Document #81SDR2111, prepared for Office of Naval Research (Dec. 1981).
Adams Harold W.
Beck Shrive
Chen Bret
Marasco Joseph A.
Martin Marietta Energy Systems Inc.
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