Moly mask construction and process

Etching a substrate: processes – Forming or treating mask used for its nonetching function

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S005000

Reexamination Certificate

active

07115207

ABSTRACT:
Disclosed is a method of manufacturing a metal mask for an integrated circuit chip interconnect solder bump. The invention deposits a very thick photoresist on both sides of a very thick molybdenum foil sheet (the molybdenum sheet is at least 8 mils thick and the photoresist is at least 5 microns thick). Then the process exposes and develops the photoresist to produce at least one opening having a diameter of at least 5 mil. The invention simultaneously etches both sides of the molybdenum foil using a very low etchant spray pressure of approximately 5 psi to form at least one via in the molybdenum foil that has a diameter of at least 12 mil and a knife-edge of 0.2 mil. The photoresist is removed after the etching process.

REFERENCES:
patent: 5268068 (1993-12-01), Cowell et al.
patent: 2004/0238491 (2004-12-01), Berasi et al.
NN62096 IBM Technical Disclosure Bulletin, vol. 5, Iss. 4, pp. 6-7, Sep. 1, 1962., US.
NN7707577 IBM Technical Disclosure Bulletin, vol. 20, Iss. 2, pp. 57-578, Jul. 1, 1977., US.
U.S. Appl. No. 09/596,754 (has been abandoned).
Technical Report:“Essonnes Tin Cap Process Development Summary” Nov. 24, 1994, 95A001149.
Technical Report:“Tempory Chip Attach Technique for Burn in of CMOS Chips With Tin Cap Pads”.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Moly mask construction and process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Moly mask construction and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Moly mask construction and process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3708305

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.