Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-04-08
2008-10-14
Kunemund, Robert M. (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S105000, C117S108000, C117S952000
Reexamination Certificate
active
07435297
ABSTRACT:
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.
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Kerley Thomas M.
Tsao Jeffrey Y.
Waldrip Karen E.
Ashby Carol
Kunemund Robert M.
Rao G. Nagesh
Sandia Corporation
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