Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Patent
1998-01-22
2000-03-28
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
257 25, 428 99, H11L 3524
Patent
active
060435100
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to molecular-doped negative-resistance devices having a negative-resistance and switching and rectifying characteristics, in the field of organic molecular electronics, and a method for manufacturing the same. More particularly, the present invention relates to a molecular-doped negative-resistance device having a negative-resistance which is fabricated by using an electrically insulating organic polymer and a lower molecular organic compound, and a method for manufacturing the same.
BACKGROUND ART
Conventionally, as a negative-resistance device, there have been proposed various super lattice elements including those formed from single crystals of inorganic materials such as GaAs, AlAs and the like, and those formed from a combination of a single crystal of inorganic material and an inorganic amorphous material or electrically insulating organic polymer. Most of these are such that a thin film is formed by the molecular beam epitaxy technique (hereinafter referred to as an MBE process). This requires treatment under extremely severe conditions, such as ultra-high vacuum, high temperature conditions and the like and the use of a very costly and large-sized film forming apparatus. The process also requires strict control, and this makes it difficult to manufacture such a device uniform over a wide area. Further, semiconductors available for use are limited.
In the Japanese Patent Application Laid-Open Publication No. 6-29556, there is proposed a resonant tunneling diode having a negative-resistance characteristic which includes a fullerene thin film formed from a carbon cluster as an organic material and an electrically insulating thin film in which is used a metal oxide, the thin films being sandwiched between electrodes. This publication points out or suggests that an electrically insulating organic compound and an electrically insulating organic polymer matrix can be used as an electrically insulating layer. However, it is difficult to form an electrically insulating layer to the thickness of 3 to 15 nm, a thickness required for obtaining negative-resistance characteristics. In the publication, no example is shown of a tunnel diode in which the electrically insulating layer is formed from such electrically insulating organic materials.
Recently, an electroluminescence device having a quantum well structure formed by vacuum vapor depositing ultra-thin films of organic dyes alternately by an organic molecular beam evaporation method has been proposed in, for example, the prior art literature 1, Hiroshi Ohmori, et al, "Organic Quantum Well Structure EL Device", Monthly publication of The Japan Society of Applied Physics, Vol. 64, No. 3, pp. 246-249, 1995. However, the device has not demonstrated any negative-resistance characteristic.
In an operation at a room temperature, a negative-resistance device is required to exhibit a large ratio of peak current to valley current (the term "ratio of peak current to valley current" is hereinafter referred to as a "PV ratio"). However, the PV ratio of a resonant tunnel diode in which GaAs is used is about 7.7 at a temperature of 77 K (See, for example, prior art literature 2, Takayuki Nakagawa, et al, "Effect of Prewell Insertion in InGaAs/A1As/InAs resonant tunneling diodes", Papers at Autumn General Meeting, 1995 of the Japan Society of Applied Physics Society, 29a-Zm-8, 1995).
On a junction interface of a negative-resistance device using an inorganic single crystal there exists a non-joinable surface level arising from dangling bonds which is characteristic of crystals. Development of such a surface level and degradation of crystallinity on the junction interface leads to lowering the interface electric field, thus lowering the efficiency of carrier injection with the result that the resonant-tunneling effect of the device is substantially affected.
A device comprising a combination of an electrically insulating organic polymer and an inorganic single crystal is inevitably thermally unstable and physically fragile be
REFERENCES:
patent: 4371883 (1983-02-01), Potember et al.
patent: 4735852 (1988-04-01), Osada
patent: 5185208 (1993-02-01), Yamashita et al.
patent: 5294810 (1994-03-01), Egusa et al.
patent: 5294820 (1994-03-01), Gemma et al.
patent: 5359204 (1994-10-01), Eguchi et al.
Wang, Y.H., Applied Physics Letter, vol. 57, No. 15, pp. 1546-1547, (Oct. 8, 1990).
Heun, S. et al., Physica B Condensed Matter, vol. 216, No. 1/02, pp. 43-52, (Dec. 1, 1995).
Pai, D. M. et al., Journal of Physical Chemistry, vol. 88, No. 20, pp. 4714-4717, (Sep. 27, 1984).
Johnson, G. E. et al., Proceedings of the SPIE, vol. 1910, Electroluminscent Materials, Devices, and Large-Screen Displays, San Jose, CA, USA, pp. 6-14, (Feb. 1-2, 1993).
Yuguang, M. A. et al., Chinese Physics Letters, vol. 11, No 7, pp. 454-456, (1994).
Yutaka Ohmari et al., "Organic Quantum Well Structure EL Device", Japan Society of Applied Physics, vol. 64, No. 3, pp. 246-249, 1995 (with English Abstract).
Takayuki Nakagawa et al., "Effect of Prewell Insertion in InGaAs/AlAs/In As resonant tunneling diodes", Papers at Autumn General Meeting, 1995 of the Japan Society of Applied Physics Society, 29a-Zm-8, 1995 (with partial English translation).
Crane Sara
Kawamoto Akira
Organet Chemical Co., Ltd.
LandOfFree
Molecule-doped negative-resistance device and method for manufac does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Molecule-doped negative-resistance device and method for manufac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Molecule-doped negative-resistance device and method for manufac will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1327953