Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-12-18
2007-12-18
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S637000, C438S678000, C257SE21251, C257SE21309, C257SE21577
Reexamination Certificate
active
11284572
ABSTRACT:
Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled layer is formed on an exposed surface of the dielectric material. The molecularly self-assembled layer includes material(s) having a molecular characteristic and/or a molecular type that includes one or more of a molecular characteristic and/or a molecular type of a head group of molecules of the material, a molecular characteristic and/or a molecular type of a terminal group of molecules of the material, and a molecular characteristic and/or a molecular type of a linking group of molecules of the material. The molecular characteristic(s) and molecular type(s) are selected according to at least one pre-specified property of the molecularly self-assembled layer.
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Chiang Tony P.
Keshavarz Majid
Lazovsky David E.
Ghyka Alexander
Intermolecular, Inc.
Kali Law Group, P.C.
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