Molecular memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S218000, C365S185300, C365S185180, C365S185250

Reexamination Certificate

active

07324385

ABSTRACT:
Molecular memories, i.e., memories that incorporate molecules for charge storage, are disclosed. Molecular memory cells, molecular memory arrays, and electronic devices including molecular memory are also disclosed, as are processing systems and methods for manufacturing molecular memories. Methods of manufacturing molecular memories that enable semiconductor devices and interconnections to be manufactured monolithically with molecular memory are also disclosed.

REFERENCES:
patent: 5650061 (1997-07-01), Kuhr et al.
patent: 5923525 (1999-07-01), Belyakov et al.
patent: 5926412 (1999-07-01), Evans, Jr. et al.
patent: 6208553 (2001-03-01), Gryko et al.
patent: 6212093 (2001-04-01), Lindsey
patent: 6272038 (2001-08-01), Clausen et al.
patent: 6290839 (2001-09-01), Kayyem et al.
patent: 6324091 (2001-11-01), Gryko et al.
patent: 6381169 (2002-04-01), Bocian et al.
patent: 6451942 (2002-09-01), Li et al.
patent: 6484394 (2002-11-01), Heo et al.
patent: 6492056 (2002-12-01), Ovshinskey
patent: 6642376 (2003-11-01), Lindsey et al.
patent: 6657884 (2003-12-01), Bocian et al.
patent: 6674121 (2004-01-01), Misra et al.
patent: 6706473 (2004-03-01), Edman et al.
patent: 6728129 (2004-04-01), Lindsey et al.
patent: 6768157 (2004-07-01), Krieger et al.
patent: 6777516 (2004-08-01), Li et al.
patent: 6853472 (2005-02-01), Warner et al.
patent: 6855417 (2005-02-01), McCreery
patent: 6855950 (2005-02-01), McCreery
patent: 6921475 (2005-07-01), Kuhr et al.
patent: 6944047 (2005-09-01), Rotenberg et al.
patent: 6958270 (2005-10-01), Misra et al.
patent: 7005237 (2006-02-01), Lindsey et al.
patent: 7019391 (2006-03-01), Tranz
patent: 7032277 (2006-04-01), Rolla et al.
patent: 7042755 (2006-05-01), Bocian et al.
patent: 7061791 (2006-06-01), Bocian et al.
patent: 7074519 (2006-07-01), Kuhr et al.
patent: 2001/0010654 (2001-08-01), Jeng-Jye
patent: 2002/0105897 (2002-08-01), McCreery et al.
patent: 2002/0180446 (2002-12-01), Kuhr et al.
patent: 2003/0081463 (2003-05-01), Bocian et al.
patent: 2003/0082444 (2003-05-01), Kuhr et al.
patent: 2004/0007758 (2004-01-01), McCreery
patent: 2004/0115524 (2004-06-01), Misra et al.
patent: 2004/0150465 (2004-08-01), Nishida et al.
patent: 2004/0151912 (2004-08-01), McCreery
patent: 2005/0207208 (2005-09-01), Bocian et al.
patent: 2005/0270820 (2005-12-01), Mobley et al.
patent: WO 01/03126 (2001-01-01), None
patent: WO 02/077633 (2002-10-01), None
patent: WO 03/052835 (2003-06-01), None
patent: WO 03/071552 (2003-08-01), None
Roth K. M., “Charge-Retention Characteristics of Self-Assembled Monolayers of Molecular-Wire-Linked Porphyrins on Gold”,American Chemical Society, 2003, pp. 51-61.
Seth et al. “Investigation of Electronic Communication in Multi-Porphyrin Light-Harvesting Arrays”, (1994)J. Am. Chem. Soc., 116: 10578-10592.
Seth et al Soluble Synthetic Multiporphyrin Arrays. 3. Static Spectroscopic and Electrochemical Probes of Electronic Communication, (1996),J. Am. Chem. Soc., 118: pp. 11194-11207.
Strachan et al. “Effects of Orbital Ordering on Electronic Communication in Multiporphyrin Arrays” (1997),J. Am. Chem. Soc., 119: pp. 11191-11201.
Li et al. “Effects of Central Metal ion (Mg, Zn) and Solvent on Singlet Excited-State Energy Flow in Porphyrin-Based Nanostructures”, (1997),J. Mater. Chem., 7: pp. 1245-1262.
Strachan et al. “Synthesis and Characterization of Tetrachlorodiarylethyne-Linked Porphyrin Dimers. Effects of Liner Architecture on Intradimer Electronic Communication” (1998),Inorg. Chem., 37: 1191-1201.
Yang et al. Interplay of Orbital Tuning and Linker Location in Controlling Electronic Communication in Porphyrin Arrays “(1999)”,J. Am. Chem. Soc., 121: pp. 4008-4018.
Roth et al. Molecular Approach Toward Information Storage Based on the Redox Properties of Porphyrins in Self-Assembled Monolayers, (2000)Vac. Sci. Technol. B 18: pp. 2359-2364.
Roth et al. “Measurement of Electron-Transfer Rates of Charge-Storage Molecular Monolayers on Si(100). Toward Hybrid Molecular/Semiconductor Information Storage Devices” (2003),J. Am. Chem. Soc. 125: pp. 505-517.
Advanced Inorganic Chemistry, 5th Ed., Cotton & Wilkinson, John Wiley & Sons, 1988, chapter 26.
Advanced Organic Chemistry, 5th Edition, Cotton & Wilkenson, John Wiley & Sons, 1988, p. 38.
Organometallics, A Concise Introduction, Elschenbroich et al., 2nd Ed., 1992, VCH.
Comprehensive Organometallic Chemistry II, A Review of the Literature 1982-1994, Abel et al. Ed., vol. 7, Chapters 7, 8, 10 & 11, Pergamon Press.
Robbins et al., “Syntheses and Electronic Structures of Decamethylmetallocenes”, (1982),J. Am. Chem. Soc. 104: pp. 1882-1893.
Gassman et al., “(Trifluoromethyl) cyclopentadienide: A Powerful Electon-Withdrawing Ligand for Transition-Metal Complexes”, (1986),J. Am. Chem. Soc. 108: pp. 4228-4229.
Roth, K. M., Thesis published in 2002, Chapter I overview pp. 1-285.
Luyken, R. J., et al., “Concepts for hybrid CMOS-molecular non-volatile memories” Nanotechnology IOP Publishing UK., vol. 14, No. 2, 2003, pp. 273-276.
Kwok, K. S., “Materials for future electronics”Materials Today, Elsevier Science, Kidlington, GB, vol. 6, No. 12, Dec. 2003, pp. 20-27.
Gowda, et al., “Hybrid silicon/molecular memories-co-engineering for novel functionality”International Electron Devices Meeting 2003 IEDM. Technical Digest., Washington, DC, Dec. 8-10, 2003, New York, NY:IEEE, US, pp. 537-540.
Roth K. M., et al. “Measurements of Electron-Transfer Rates of Charge-Storage Molecular Monolayers On Si(100). Toward Molecular/Semiconductor Information Storage Devices”,J. Am. Chem. Soc.; Journal of the American Chemical SocietyJan. 15, 2003, vol. 125, No. 2, Jan. 15, 2003, pp. 505-517.
Gittins, et al., “A nonmetre-scale electronic switch consisting of a metal cluster and redox-addressable groups”Nature, MacMillan Journals, Ltd., London, GB, vol. 408, Nov. 2, 2000, pp. 67-69.
Nishida Y., et al. “An Interpolating Sense Circuit for Molecular Memory”,Department of Electrical and Computer Engineering, CICC 2002, 4 pp.
Schweikart, K-H, et al., “Design, synthesis, and characterization of prototypical multistate counters in three distinct architectures”,J. Mater. Chem., 2002, 12(4), pp. 808-828.
Ccc™ Spincoaters, Brewer Science, http://www.brewerscience.com/cee/products/cee100.html 8 pp., 2007.
“Bake Process Theory”,Cost Effective Equipment, 4 pp., 2007.
MBraun, Inertgas Technology, MB OX-SE-3 Oxygen Probe, (no date), www.mbraun.com, 4 pp., 2006.
“Spin Coat Theory”, Cost Effective Equipment, 6 pp., 2007.
“Spin Coating Patent Index”, http://www/mse.arizona.edu/faculty/birnie/Coatings/PatenNdx.htm, Apr. 12, 2005, 10 pp.
Primaxx website pages, http://www.primaxxinc.com/products.html, Apr. 12, 2005, 30 pp.
P. Mumbauer, et al. “Mist Deposition in Semiconductor Device Manufacturing”, Nov. 1, 2004, http://www.reed-electronics.com/semiconductor/index.asp!layout=articlePrint&articleID=CA476 . . . , 7 pp.
Xiangfeng D., et al. “Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires”,Nanoletters 2(5) (2002), pp. 487-490.
Li, C., et al. “Data Storage Studies on Nanowire Transistors with Self-Assembled Porphyrin Molecules”,J. Phys. Chem. B. 2004, 108, pp. 9646-9649.
Roth K. M., et al. “Molecular Approach Toward Information Storage Based on the Redox Properties of Porphyrins in Self-Assembled Monolayers”,J. Vac. Sci. Tech. B 2000, 18, pp. 2359-2364.
Gryko, D., et al., “Synthesis of “Porphyrin-Linker-Thiol”, Molecules with Diverse Linkers for Studies of Molecular-Based Information Storage”,J.Org. Chem. 2000, 65, pp. 7345-7355.
Gryko, D., et al., “Synthesis of Thiol-Derivatized Ferrocene-Porphyrins for Studies of Multibit Information Storage”,J. Org. Chem. 2000, 65, pp. 7356-7362.
Clausen C.,et al., “Synthesis of Thiol-Deriv

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