Molecular beam epitaxy using premixing

Details Molecular beam epitaxy using premixing Molecular beam epitaxy using premixing

1978-01-16

1979-07-03

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 156610, 156DIG70, H01L 21203

Patent

active

041599195

ABSTRACT:
An improved method of forming ternary and quaternary epitaxial films by molecular beam epitaxy involves controlling precisely the ratio of concentrations of two alloying elements in the final compound by heating predetermined independently adjustable quantities of two or more alloying elements in the same oven.

REFERENCES:
patent: 3672992 (1972-06-01), Schaefer
patent: 3716424 (1973-02-01), Schoolar
patent: 3793070 (1974-02-01), Schoolar
patent: 3915765 (1975-10-01), Cho et al.
patent: 4069356 (1978-01-01), Fischer
Chang et al., "Fabrication for Multilayer Semiconductor Devices", I.B.M. Tech. Discl. Bull., vol. 15, No. 2, Jul. 1972, pp. 365-366.
Chang et al., "Source Shaping . . . by Molecular Beam Epitaxy".
Ibid., vol. 15, No. 1, Jun. 1972, pp. 180-181.
Cho et al., "Molecular Beam Epitaxy of GaAs, AlGaAs and GaP", 1970 Symposium on GaAs, Paper No. 2, pp. 18-29.
Bis et al., "Thin Epitaxial Films of Pb.sub.1-x Sn.sub.x Te", J. Vac. Science & Technology, vol. 9, No. 1, pp. 226-230.

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