Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base
Patent
1998-03-12
2000-11-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With pretreatment or preparation of a base
117108, 117200, 118723VE, C30B 2514
Patent
active
061464589
ABSTRACT:
A method of growing a layer of Group III nitride material on a substrate by molecular beam epitaxy includes the steps of (i) disposing a substrate in a vacuum chamber, (ii) reducing the pressure in the vacuum chamber to a pressure suitable for epitaxial growth by molecular beam epitaxy, (iii) supplying ammonia through an outlet of a first supply conduit into the vacuum chamber so that the ammonia flows towards the substrate; and (iv) supplying a Group III element in elemental form through an outlet of a second supply conduit into the vacuum chamber so that said Group III element flows towards the substrate. The method causes a layer containing Group III nitride to be grown on the substrate by molecular beam epitaxy. In the method, the outlet of the first supply conduit is disposed nearer to the substrate than the outlet of the second supply conduit.
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Duggan Geoffrey
Hooper Stewart Edward
Kean Alistair Henderson
Kunemund Robert
Sharp Kabushiki Kaisha
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