Molecular beam epitaxy electrolytic dopant source

Details Molecular beam epitaxy electrolytic dopant source Molecular beam epitaxy electrolytic dopant source

1981-06-15

1984-05-08

Saba, W. G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156606, 156610, 156611, 204247, 252 623GA, 252950, 252951, 423571, 427 85, H01L 21203

Patent

active

044472765

ABSTRACT:
A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusion from a knudsen cell. The difficulties previously encountered using sulphur as such a cell are counteracted by use of an electrochemical cell as the sulphur source. The technique allows complicated doping profiles to be produced.

REFERENCES:
patent: 3839084 (1974-10-01), Cho et al.
patent: 4218271 (1980-08-01), Wood
patent: 4330360 (1982-05-01), Kubiak et al.
Rickert, H., "Electrochem. Knudsen Cells . . . Vapours", Physics of Electrolytes (Text), vol. 2, 1972, (Academic Press), pp. 519-538.

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