Molecular beam epitaxy effusion cell

Details Molecular beam epitaxy effusion cell Molecular beam epitaxy effusion cell

1997-06-10

2000-01-04

Bueker, Richard

Electric resistance heating devices

Heating devices

Vaporizer

118726, C23C 1400

Patent

active

060119047

ABSTRACT:
A molecular beam epitaxy effusion cell for growing epitaxial layers upon a semiconductor substrate by control of a collimated beam of molecules generated from a source material in a high vacuum environment in order to control the hyper abrupt stoichiometry of the effusion flux. A heated control assembly is used to control the size of the exit openings of the effusion cell. The control assembly comprises a boroelectric heating member such as a grating having a plurality of holes and a perforated cover which are adjustable relative to one another. The grating includes an internal heating element.

REFERENCES:
patent: 4543467 (1985-09-01), Eisele
patent: 5478400 (1995-12-01), Shimizu

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