Molecular beam epitaxial process

Details Molecular beam epitaxial process Molecular beam epitaxial process

1985-03-11

1986-11-11

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148DIG110, 148DIG169, 156610, 156612, 156614, 156DIG70, 156DIG103, H01L 21203, H01L 21477

Patent

active

046220836

ABSTRACT:
A molecular beam epitaxial growth process, for growth of III-V compounds, wherein a substrate is heated approximately to growth temperature before the group III cell is fully heated. That is, for example, to grow gallium arsenide, the arsenic cell would be heated, the arsenic cell's shutter opened, and the substrate heated up to growth temperature (e.g. 600 C), before the gallium cell is heated up. After the gallium cell is heated up, its shutter is opened, and epitaxial growth proceeds.

REFERENCES:
patent: 3974002 (1976-08-01), Casey et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4233092 (1980-11-01), Harris et al.
patent: 4330360 (1982-05-01), Kubiak et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4383872 (1983-05-01), Roberts
patent: 4470192 (1984-09-01), Miller
patent: 4493142 (1985-01-01), Hwang

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