Molecular beam epitaxial growth method

Details Molecular beam epitaxial growth method Molecular beam epitaxial growth method

1998-09-03

2000-08-08

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117107, 117108, 117953, 117954, C30B 2306

Patent

active

060996404

ABSTRACT:
A method of promoting evaporation of excess indium from a surface of an indium containing compound semiconductor single crystal layer during a discontinuation of a molecular beam epitaxial growth. Substantial supply of all elements for the indium containing compound semiconductor single crystal layer are stopped at least until a substrate temperature rises to a predetermined temperature of not less than an indium re-evaporation initiation temperature.

REFERENCES:
patent: 5400739 (1995-03-01), Kao et al.
patent: 5490880 (1996-02-01), Kao et al.
patent: 5625204 (1997-04-01), Kao et al.
Jackson et al., "Monitoring Ga and In desorption and In surface segregation during MBE using atomic adsorption", Journal of Crystal Growth, vol. 175/176 pp. 244-249, 1997.

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