Molecular beam epitaxial growth apparatus

Details Molecular beam epitaxial growth apparatus Molecular beam epitaxial growth apparatus

1986-06-04

1987-05-12

Smith, John D.

Coating apparatus

Gas or vapor deposition

With treating means

156DIG103, 148DIG169, C23C 1600

Patent

active

046640630

ABSTRACT:
An apparatus for growing a compound semiconductor on a substrate by molecular beam epitaxy, includes a growth chamber, and Knudsen cells, disposed in the growth chamber, for generating molecular beams of source materials for the compound semiconductor independently. An ion gauge is disposed in the growth chamber, for measuring intensities of the molecular beams. A heater disposed in the growth chamber heats the substrate to a growth temperature of the compound semiconductor. A heating element heats the heater and the ion gauge to evaporate contamination materials including the source materials deposited on said substrate heating means and said measuring means after the growth of the compound semiconductor. An evacuater is provided to evacuate the growth chamber to a vacuum.

REFERENCES:
patent: 4137865 (1979-02-01), Cho
patent: 4201152 (1980-05-01), Luscher
patent: 4542712 (1985-09-01), Sato
patent: 4580522 (1986-04-01), Fujioka
Molecular Beam Epitaxy of III-V Compounds; K. Ploog, Springer-Verlag, 1980, pp. 80 and 109.
J. Vac. Sci. Technol., 18(3), Apr. 1981, R. Z. Bachrach et al, "Morphological Defects Arising During MBE Growth of GaAs", pp. 756-764.

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