Molding technique for fabrication of optoelectronic devices

Details Molding technique for fabrication of optoelectronic devices Molding technique for fabrication of optoelectronic devices

2007-08-07

2007-08-07

Nguyen, Nam (Department: 1753)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C136S250000, C136S252000, C136S263000, C257S040000, C257S043000, C257S079000, C438S063000, C438S082000, C438S085000

Reexamination Certificate

active

10303665

ABSTRACT:
Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials including semiconducting metals and metal oxides (such as TiO2, CdSe, CdS, CdTe, or CuO) may be deposited into the pores of the porous template film. After deposition, the template film may be removed by controlled exposure to acid or base without disrupting the semiconducting material leaving behind a nanoscale network grid. Spaces in the network grid can then be filled with complementary semiconducting material, e.g., a semiconducting polymer or dye to create a exciton-splitting and charge transporting network with superior optoelectronic properties for an optoelectronic devices, particularly photovoltaic devices.

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