Mold-type semiconductor laser device with reduced light-emitting

Coherent light generators – Particular temperature control – Heat sink

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 49, 372 34, H01S 304

Patent

active

054886236

ABSTRACT:
A semiconductor laser device includes a lead frame for electrically controlling a laser diode element having at least one end lace for emitting a laser beam and for mechanically supporting the laser diode element on a planar major surface thereof with a support member interposed therebetween. A sealing resin layer, transparent to the passage of the laser beam, covers at least the laser diode element on the lead frame in a sealing manner. To improve the light emitting point stability of the laser diode element, when the cross section of the planar major surface of the lead frame is parallel to the light emitting end face, a horizontal direction is the longitudinal direction of the cross section of the lead frame, a horizontal center line defines the center of the cross section of the lead frame, and a vertical center line defines the center as viewed in the vertical direction, the sealing resin layer is shaped symmetrically with respect to the vertical center line.

REFERENCES:
patent: 4638343 (1987-01-01), Althaus et al.
patent: 4712127 (1987-12-01), Colombo et al.
patent: 4852112 (1989-07-01), Kagawa et al.
patent: 4951291 (1990-08-01), Miyauchi et al.
patent: 4951292 (1990-08-01), Kuindersma et al.
patent: 4962985 (1990-10-01), LeGrange
patent: 4975922 (1990-12-01), Sakane et al.
patent: 4985370 (1991-01-01), Ponjee et al.
patent: 5140384 (1992-08-01), Tanaka
patent: 5307362 (1994-04-01), Tanaka et al.
patent: 5309460 (1994-05-01), Fujimaki et al.
Patent Abstract of Japan, vol. 17, No. 238 (E-1363) relating to Japanese Patent document 4-364791, published Dec. 17, 1991, Abstract published May 13, 1993.
European Search Report dated Aug. 26, 1993 for EP 93 10 5799.
Patent Abstracts of Japan, vol. 14, No. 507 (E-998) Nov. 6, 1990, abstract, JP 2 209 786, Miyahara Hiroyuki et al., Semiconductor Laser Device.
Patent Abstracts of Japan, vol. 14, No. 507 (E-998) Nov. 6, 1990, abstract, JP 2 209 785, Miyahara Hiroyuki et al., Optical Semiconductor Device.
Patent Abstracts of Japan, vol. 13, No. 541 (E-854) Dec. 5, 1989, abstract, JP 1 222 492, Kume Masahiro et al., Semiconductor Laser Device.
Patent Abstracts of Japan, vol. 10, No. 69 (E-389) Mar. 18, 1986, abstract, JP 60 217 687, Sawai Masaaki, Light-Emitting Electronic Device.
Patent Abstracts of Japan, vol. 12, No. 486 (E-695) Dec. 19, 1988, abstract JP 63 200 583, Yano Morichika et al., Semiconductor Laser Device.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mold-type semiconductor laser device with reduced light-emitting does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mold-type semiconductor laser device with reduced light-emitting, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mold-type semiconductor laser device with reduced light-emitting will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-161175

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.