Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-12-19
2006-12-19
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S776000
Reexamination Certificate
active
07151311
ABSTRACT:
An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.
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Hino Yasunari
Nakajima Dai
Shikano Taketoshi
Tada Kazuhiro
Cao Phat X.
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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