Moisture sensor with valve metal composition electrodes

Details Moisture sensor with valve metal composition electrodes Moisture sensor with valve metal composition electrodes

1982-11-30

1984-11-13

Albritton, C. L.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

338308, 338309, 73335, 733365, H01L 700

Patent

active

044828829

ABSTRACT:
A moisture sensor comprises a moisture-sensitive layer formed from the oxide of highly resistive porous low density tantalum on a moisture-insensitive substrate. Between the substrate and the moisture-sensitive tantalum oxide layer there is a base electrode of an anodically oxidizable metal, preferably tantalum, of a density higher than the density of the low density tantalum from which the tantalum oxide layer is formed. A covering electrode partially covering the tantalum oxide layer has windows through which the water vapor containing medium can penetrate into the moisture-sensitive tantalum oxide layer. The inactive regions of the tantalum oxide layer disposed below the windows are removed to increase the rate of response.

REFERENCES:
patent: 4217623 (1980-08-01), Nishono et al.
patent: 4358748 (1982-11-01), Gruner et al.
patent: 4393434 (1983-07-01), Imai et al.
patent: 4433319 (1984-02-01), Luder et al.

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