Moisture sensor

Measuring and testing – Gas analysis – Moisture content or vapor pressure

Reexamination Certificate

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Reexamination Certificate

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08079248

ABSTRACT:
A moisture sensor includes interdigitated first and second electrodes formed in trenches A porous low-k dielectric is provided between the electrodes. The electrodes are of Cu surrounded by a barrier layer to protect the Cu from corrosion. TiN may be used as barrier layer and selectively deposited barrier material such as CoWB, MoWB or NiMoP as barrier layer.

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Michelon, J; et al “Impact of Moisture on Porous Low-K Reliability” 2005 IIRW Final Report, Oct. 17, 2005, pp. 35-38.
Michelon, J; et al “Moisture Influence on Porous Low-K Reliability” IEEE Transactions on Device and Materials Reliability, vol. 6, No. 2, Jun. 2006, pp. 169-174.
Tokei, Zs. et al. “Reliability Challenges for Copper Low-k Dielectrics and Copper Diffusion Barriers”, Microelectronics Reliability, vol. 45, pp. 1436-1442 (Aug. 2005).
Hoofman R. J. O. M. et al., Challenges in the Implementation of Low-k Dielectrics in the Back-end of Line, Microelectronic Engineering, vol. 80, pp. 337-344 (2005).

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