Moelcular beam epitaxy for selective epitaxial growth of III - V

Details Moelcular beam epitaxy for selective epitaxial growth of III - V Moelcular beam epitaxy for selective epitaxial growth of III - V

1988-05-19

1990-08-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG65, 148DIG97, 148DIG69, 156610, 437 90, 437133, 437939, 437946, 437976, H01L 21203, H01L 2120

Patent

active

049487515

ABSTRACT:
A method of selective epitaxial growth includes a step of selectively forming an insulator film on a predetermined region of a semiconductor substrate and a step of evaporating a starting material containing a Group III element in vacuum in the presence of a Group V element to grow epitaxially a III-V compound semiconductor selectively on the semiconductor substrate under the condition where the partial pressure of the Group III element just above the semiconductor substrate is greater than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the semiconductor substrate and is smaller than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the insulator film.
When InAs is grown epitaxially and selectively on a GaAs substrate, the GaAs substrate is kept at 500.degree. to 650.degree. C. and when GaAs is grown epitaxially and selectively on the GaAs substrate, the GaAs substrate is kept at 700.degree. to 775.degree. C.

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