Module for high voltage power for converting a base of IGBT...

Details Module for high voltage power for converting a base of IGBT... Module for high voltage power for converting a base of IGBT...

2006-02-07

2006-02-07

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

C257S150000, C257S181000, C257S182000, C257S686000, C257S700000, C257S706000, C257S712000, C257S713000

Reexamination Certificate

active

06995409

ABSTRACT:
This power switching cell comprises:at least two power components (4–6) forming a chain (2) of components electrically linked in series by way of at least one intermediate bond (52, 70), anda dielectric substrate inside which are incorporated said at least two components (4–6).Each intermediate bond (52, 70) as well as the faces of the components linked to this intermediate bond are entirely incorporated inside said substrate, and the faces not linked to an intermediate bond (52, 70) of the components situated at the ends of said chain (2) are disposed in such a way as to be separated from one another by way of the dielectric material forming said substrate (22). This substrate is formed of a stack of parallel sheets (24–27) of dielectric material, and each of the components (4–6) following in said chain is incorporated in the thickness of a different sheet.

REFERENCES:
patent: 5574312 (1996-11-01), Bayerer et al.
patent: 6060795 (2000-05-01), Azotea et al.
patent: 2003/0090873 (2003-05-01), Ohkouchi
patent: 1 162 719 (2001-12-01), None
patent: 1 172 850 (2002-01-01), None
patent: 1 318 547 (2003-06-01), None
Design Optimization of an Integrated Liquid-Cooled IGBT Power Module Using CFB Technique—Tien-Yo (Tom) Lee—(pp. 55-60—XP-000924185)—IEEE Transactions of Components and Packaging Technologies, vol. 23, No. 1—Mar. 2000).

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