Modulation doped tunnel junction

Details Modulation doped tunnel junction Modulation doped tunnel junction

2006-08-29

2006-08-29

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C257S022000

Reexamination Certificate

active

07099362

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, the tunnel junction including a modulation-doped layer; and a second mirror stack over the tunnel junction. The modulation doped layer can be used for either the n-layer or the p-layer, or the both layers of the tunnel junction. Such tunnel junctions are especially useful for a long wavelength VCSEL.

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