Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-01-11
2011-01-11
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S103000, C257S194000, C257S198000, C257S201000, C257SE21125, C257SE21127, C257SE21603, C257SE27012, C257SE27128, C257SE29022, C257SE29066, C257SE29114, C257SE29189, C257SE31073, C438S207000, C438S268000, C438S302000, C438S309000, C438S319000
Reexamination Certificate
active
07868335
ABSTRACT:
A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.
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Chow David H.
Hussain Tahir
Li James Chingwei
Sokolich Marko
HRL Laboratories LLC
Ladas & Parry
Lebentritt Michael S
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