Modulation doped quantum well waveguide modulator

Details Modulation doped quantum well waveguide modulator Modulation doped quantum well waveguide modulator

1994-03-17

1996-07-09

Nelms, David C.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

359245, G02F 103

Patent

active

055350453

ABSTRACT:
The dielectric constant and the optical properties of a semiconductor device are changed by tuning the electron density in modulation doped quantum wells. The quantum wells are formed in an "i" region of a p-i-n structure having, in sequence, a 150 .ANG. wide GaAs quantum well, a wider Al.sub.x Ga.sub.1-x As barrier with a central silicon doped section and an undoped AlGaAs barrier with a slightly higher barrier height to prevent transfer of carriers to the next well. When a reverse bias is applied, more D centers are tuned below the Fermi level so that they can trap electrons from the wells, thereby reducing electron density and changing the optical properties of the material.

REFERENCES:
patent: 5298762 (1994-03-01), Ou
patent: 5448080 (1995-09-01), Han et al.
Zucker et al, "Multi-gigahertz-bandwidth intensity modulators using tunabelectron-density multiple quantum well waveguides", Appl. Phys. Lett 59 (2), American Institute of Physics, pp. 201-203, 8 Jul. 91.
Zucker et al, "Compact Low-Voltage InGaAs/InAlAs Multiple Quantum Well Waveguide Interferometers", Electronics Letters, vol. 26, no. 24, pp. 2029-2031, 22 Nov. 1990.

Affiliated with

Also associated with

Rating

Modulation doped quantum well waveguide modulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modulation doped quantum well waveguide modulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modulation doped quantum well waveguide modulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1872146