Modulation doped high electron mobility transistor with n-i-p-i

Details Modulation doped high electron mobility transistor with n-i-p-i Modulation doped high electron mobility transistor with n-i-p-i

1987-07-06

1989-08-08

James, Andrew J.

357 58, 357 16, 357 4, H01L 2980

Patent

active

048557978

ABSTRACT:
A modulation-doped field effect transistor includes an undoped semiconductor layer and an arrangement for supplying charge carriers into a region of the semiconductor layer adjacent one side. An arrangement is provided for locally modulating hole and electron density in another region adjacent the other side of the semiconductor layer in a repeating pattern of alternations so as to inhibit current flow in the direction of the alternations.

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