Modulation doped GaAs/AlGaAs field effect transistor

Details Modulation doped GaAs/AlGaAs field effect transistor Modulation doped GaAs/AlGaAs field effect transistor

1985-06-27

1987-03-24

Carroll, J.

357 16, 357 55, H01L 2980

Patent

active

046528962

ABSTRACT:
To realize a depletion-mode modulation-doped field-effect transistor with high gate-length to depletion-depth ratio that is capable of providing high power gain at millimeter-wave frequencies, an ohmic gate or a heterojunction gate is used on the n-AlGaAs/GaAs layered structure, replacing the prior art Shottky-barrier metal gate. The depletion-mode operation is desirable for analog signal amplifying circuits as opposed to the enhancement-mode device commonly used for switching or digital circuits. In the case of Schottky-barrier gate, high aspect ratio structures naturally operate in the enhancement mode, hence the need for the change in the gate electrode structure.

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