Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-10-07
2000-08-08
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 28C, 257284, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
061005487
ABSTRACT:
A process is provided for fabricating MODFET's in group III nitride compound semiconductors. The process precedes isolation of the MODFET structure with the use of e-beam lithography to define very narrow (e.g., .about.0.25 micrometer) gates which enhance transistor microwave cut-off frequency. Because these compound semiconductors resist chemical etchants, isolation is accomplished by etching with reactive ions to form an isolation mesa having a vertical mesa sidewall. To improve breakdown, the mesa sidewall is covered with a passivation layer prior to deposition of a gate feed that contacts the gate. To reduce parasitic gate capacitance, the gate feed is spaced from a narrow edge of the transistor's two-dimensional electron gas.
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Le Minh V.
Nguyen Chanh N.
Nguyen Nguyen Xuan
Duraiswamy V. D.
Hughes Electronics Corporation
Meier Stephen D.
Sales M. W.
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