Modulation circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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257141, 257378, 330 10, 330299, 330300, 332117, 332135, H01L 2974, H03F 338, H03C 300

Patent

active

054988853

ABSTRACT:
An integrated circuit is provided with particular application for high frequency modulation circuits, such as a mixer circuit, with reduced noise and gain. The circuit provides a novel application of a single device comprising a 4 or 5 terminal, gate controlled lateral bipolar junction transistor device, in the form of a merged MOS and lateral bipolar transistor. In a grounded base configuration, RF and LO signals are applied to the gate and emitter terminals respectively and provide for modulated output at the collector, and provides signal modulation with reduced noise compared with multi-device implementations of known mixer circuits using a summation circuit, diodes and FETs. Advantageously, operation of the device in the grounded base or grounded emitter configuration provides for strong modulation of the DC current gain, i.e. over 4 decades, as a function of gate voltage.

REFERENCES:
patent: 4541123 (1985-09-01), Saka
patent: 4967246 (1990-10-01), Tanaka
patent: 5151625 (1992-09-01), Zarabadi et al.
N. Camilleri et al "Silicon MOSFETs, the Microwave Device Technology for the 90s" 1991 IEEE MTT-S Digest pp. 545-548.
S. Maas "Microwave Mixers" published by Artech House, Norwood MA (1986)--Table of Contents only.
A. M. Pavio et al "Double Balanced Mixers Using Active and Passive Techniques" IEEE Transactions on Microwave Theory and Techniques, vol. 36, No. 12, Dec. 1988 pp. 1948-1957.
R. Hadaway et al "A Sub-Micron BiCMOS Technology for Telecommunications" Microelectronic Engineering 15 (1991) 513-516 Elseview.

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