Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase inverse gain
Reexamination Certificate
2005-12-13
2005-12-13
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase inverse gain
C257S197000
Reexamination Certificate
active
06975015
ABSTRACT:
An integrated circuit structure, a trigger device and a method of electrostatic discharge protection, the integrated circuit structure including: a substrate having a top surface defining a horizontal direction, the substrate of a first dopant type; a first horizontal layer in the substrate, the first layer of a second dopant type; and a second horizontal layer of the first dopant type, the second layer on top of the first layer and between the top surface of the substrate and the first layer, the second layer electrically modulated by the first layer.
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patent: 6777723 (2004-08-01), Narita
Voldman Steven H.
Zierak Michael J.
Canale Anthony
Schmeiser Olsen & Watts
Trinh (Vikki) Hoa B.
Weiss Howard
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