Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2003-04-11
2008-10-28
Talbot, Brian K (Department: 1792)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S248100, C427S255280
Reexamination Certificate
active
07442415
ABSTRACT:
A method of forming a layer of high-k dielectric material in an integrated circuit includes preparing a silicon substrate; forming a high-k dielectric layer by a sequence of ALD cycles including: depositing a first layer of metal ligand using ALD with an oxygen-containing first precursor; and depositing a second layer of metal ligand using ALD with a second precursor; repeating the sequence of ALD cycles N times until a near-critical thickness of metal oxide is formed; annealing the substrate and metal oxide layers every N ALD cycles in an elevated temperature anneal; repeating the sequence of ALD cycles and elevated temperature anneals until a high-k dielectric layer of desired thickness is formed; annealing the substrate and the metal oxide layers in a final annealing step; and completing the integrated circuit.
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Conley, Jr. John F.
Ono Yoshi
Stecker Gregory M.
Ripma David C
Sharp Laboratories of America Inc.
Talbot Brian K
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