Modulated temperature method of atomic layer deposition...

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S248100, C427S255280

Reexamination Certificate

active

07442415

ABSTRACT:
A method of forming a layer of high-k dielectric material in an integrated circuit includes preparing a silicon substrate; forming a high-k dielectric layer by a sequence of ALD cycles including: depositing a first layer of metal ligand using ALD with an oxygen-containing first precursor; and depositing a second layer of metal ligand using ALD with a second precursor; repeating the sequence of ALD cycles N times until a near-critical thickness of metal oxide is formed; annealing the substrate and metal oxide layers every N ALD cycles in an elevated temperature anneal; repeating the sequence of ALD cycles and elevated temperature anneals until a high-k dielectric layer of desired thickness is formed; annealing the substrate and the metal oxide layers in a final annealing step; and completing the integrated circuit.

REFERENCES:
patent: 6203613 (2001-03-01), Gates et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6686212 (2004-02-01), Conley et al.
patent: 6846743 (2005-01-01), Endo et al.
patent: 6875677 (2005-04-01), Conley et al.
patent: 6930059 (2005-08-01), Conley et al.
patent: 6984592 (2006-01-01), Vaartstra
patent: 2003/0003635 (2003-01-01), Paranjpe et al.
patent: 2003/0134038 (2003-07-01), Paranjpe
patent: 2005/0112874 (2005-05-01), Skarp et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Modulated temperature method of atomic layer deposition... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modulated temperature method of atomic layer deposition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modulated temperature method of atomic layer deposition... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3995865

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.