Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-09-24
1994-12-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 12, 257 96, H01L 29161, H01L 29205, H01L 29225
Patent
active
053731662
ABSTRACT:
A heterostructure laser diode is provided with an active region that includes a ternary or quaternary semiconductor compound. The composition of the semiconductor compound forming the active region is modulated resulting in an active region with a modulated strain profile (.increment.a/a), e.g., a triangular sawtooth-like strain profile, perpendicular to the laser diodes epitaxial layers, i.e., parallel to the z-axis. This permits the present invention to increase strain and avoid formation of misfit dislocations by compensation, i.e., by inserting strained layers having opposing strains.
REFERENCES:
patent: 5251225 (1993-10-01), Eglash et al.
J. W. Matthews, et al., "Defects in Epitaxial Multilayers" Journal of Crystal Growth, 27, pp. 118-125, 1974.
S. Adachi, "Material Parameters of In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y and related Binaries" J. Appl. Phys. 53 (12) pp. 8775-8792, Dec. 1982.
"Band-Structure Engineering for Low-Threshold High-Efficiency Semiconductor Lasers" Electronics Letters, vol. 22, No. 5 pp. 249-250, Feb. 27, 1986.
T. C. Chong, et al., "Theoretical Gain of Strained-Layer Semiconductor Lasers in the Large Strain Regime" IEEE Jrl. of Quantum Electronics, vol. 25, No. 2, pp. 171-178, Feb. 1989.
S. W. Corzine, et al., "Theoretical Gain in Compressive and Tensile Strained InGaAs/InGa AsP Quantum Wells" Appl. Phys. Lett. 59 (5) pp. 588-590, Jul. 1991.
A. Valster, et al., "Effect of Strain on the Threshold Current of GaInP/AlGaInP Quantum Well Lasers Emitting at 633 nm" Proc. 13th IEEE Int. Semiconductor Laser Conference, Japan, pp. 152-153, Sep., 1992.
P. J. A. Thijs, "Progress in Quantum Well Lasers: Application of Strain" Proc. 13th IEEE Int. Semiconductor Laser Conf., Japan, pp. 2-5, Sep. 1992.
P. J. A. Thijs, et al., "Low-pressure MOVPE Growth and Characterization of Strained-Layer InGaAs-InGaAsP Quantum Well Lasers" Microelectronic Engineering, Elsevier, vol. 18, pp. 57-74, 1992.
Landolt-Bornstein, "Numerical Data & Functional Relationships in Science & Technology" Group III: Crystal & Solid State Physics, vol. 22, Semiconductors, Supplements & Extensions to V. III/17, Sub.vol#a, Berlin, Chapter 2.16.3.
H. Kawanishi, et al., "Low threshold current density of GaInAsP visible injection laser diodes lattice matched with (100) GaAs emitting at 705 nm" J. Appl. Physics, V. 58, (1), pp. 37-39, Jul. 1985.
T. C. Chong, et al., "Theoretical Gain of Strained-Layer Semiconductor Lasers in the Large Strain Regime" IEEE Journal of Quantum Electronics, V. 25, No. 2, pp. 171-178, Feb. 1989.
M. Joma, et al., "High-power 1.48.mu. multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy" Appl. Phys. Lett, V. 58, (20), pp. 2220-2222, May 1991.
B. I. Miller, et al., "Strain-compensated strained-layer superlatices for 1.5 .mu.m wavelength lasers" Appl. Phys. Lett. V. 58 (18), pp. 1952-1954, May 6, 1991.
C. P. Seltzer, et al., "Zero-Net-Strain Multiquantum Well Lasers" Electronics Letters, V. 27, No. 14, pp. 1268-1269, Jul. 4, 1991.
Buchan Nicholas I.
Heuberger Willi
Roentgen Peter
International Business Machines - Corporation
Jackson Jerome
Kelley Nathan
Schnurmann H. Daniel
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