Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-07-12
2005-07-12
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C451S036000, C051S309000
Reexamination Certificate
active
06916742
ABSTRACT:
An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 nm, 0.005 to 0.8 polyvinyl pyrrolidone for coating the silica particles, 0.01 to 10 inhibitor, 0.001 to 10 complexing agent and a balance water and incidental impurities; and the aqueous slurry having a pH of at least 7.
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Quanci John
VanHanehem Matthew
Ye Qianqiu
Biederman Blake T.
Pham Long
Rao Shrinivas H.
Rohm and Haas Electronic Materials CMP Holdings Inc.
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