Modular barrier removal polishing slurry

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S693000, C451S036000, C051S309000

Reexamination Certificate

active

06916742

ABSTRACT:
An aqueous slurry is useful for chemical mechanical planarizing a semiconductor substrate. The slurry includes by weight percent, 0.1 to 25 oxidizing agent, 0.1 to 20 silica particles having an average particle size of less than 200 nm, 0.005 to 0.8 polyvinyl pyrrolidone for coating the silica particles, 0.01 to 10 inhibitor, 0.001 to 10 complexing agent and a balance water and incidental impurities; and the aqueous slurry having a pH of at least 7.

REFERENCES:
patent: 4154610 (1979-05-01), Katoh
patent: 6328634 (2001-12-01), Shen et al.
patent: 6348076 (2002-02-01), Canaperi et al.
patent: 6443812 (2002-09-01), Costas et al.
patent: 6468911 (2002-10-01), Miyashita et al.
patent: 2001/0024933 (2001-09-01), Sachan et al.
patent: 2002/0019202 (2002-02-01), Thomas et al.
patent: 2002/0132563 (2002-09-01), Luo et al.
patent: 2002/0146965 (2002-10-01), Thomas et al.
patent: 2004/0014400 (2004-01-01), Cherian et al.
patent: 0 846 740 (1998-06-01), None
patent: WO 99/64527 (1999-12-01), None
patent: WO 00/36037 (2000-06-01), None
patent: WO 01/14496 (2001-03-01), None
patent: WO 01/19935 (2001-03-01), None
U.S. Appl. No. 09/420,682, Sachan et al.

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