Modified source/drain implants in a double-poly non-volatile mem

Details Modified source/drain implants in a double-poly non-volatile mem Modified source/drain implants in a double-poly non-volatile mem

1987-02-02

1988-10-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437 57, 437 43, 357 42, H01L 21265

Patent

active

047756420

ABSTRACT:
Implementing modified souce/drain implants in a non-volatile memory process while leaving the source/drain regions in the memory cells of the device unmodified and adding no critical mask steps. Methods for implementing both low dose drain and graded source/drain modifications in a double poly non-volatile memory process include the possibility of leaving the spacers used to modify the peripheral source/drain regions in place in the array portion of the device. Alternate methods include the possibility of removing the spacers in the array portion without the addition of critical mask steps and of keeping the spacers out of the array portion entirely.

REFERENCES:
patent: 4590665 (1986-05-01), Owens et al.
patent: 4598460 (1986-07-01), Owens et al.
patent: 4646425 (1987-03-01), Owens et al.

Affiliated with

Also associated with

Rating

Modified source/drain implants in a double-poly non-volatile mem does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modified source/drain implants in a double-poly non-volatile mem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modified source/drain implants in a double-poly non-volatile mem will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2156333