Modified optical transmission technique for characterizing epita

Optics: measuring and testing – For light transmission or absorption

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G01N 2122

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active

041283384

ABSTRACT:
An improved method of determining the energy bandgap of an epitaxial semiconductor layer on a substrate corrects for an overestimation of energy gap yielded by normal optical transmittance measurements. The overestimation of energy bandgap is caused by a graded bandgap region which exists between the epitaxial semiconductor layer and the substrate.

REFERENCES:
patent: 3496024 (1970-02-01), Ruehrwein
patent: 3725135 (1973-04-01), Hager et al.
patent: 3902924 (1975-09-01), Maciolek et al.

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