Fishing – trapping – and vermin destroying
Patent
1991-05-08
1993-03-23
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG117, 437 69, 437968, H01L 2176
Patent
active
051963671
ABSTRACT:
A method for fabricating semiconductor devices having field oxide isolation with channel stop is described which overcomes the encroachment problems of the prior art. A semiconductor substrate is provided. A multilayer oxidation masking structure of a silicon oxide layer, a polycrystalline silicon layer and a silicon nitride layer is formed. The multilayer oxidation mask is patterned by removing the silicon nitride layer and a portion of the polycrystalline silicon layer in the areas designated to have field oxide isolation grown therein. A sidewall insulator structure is formed on the exposed sidewalls of the patterned oxidation mask. Impurities are implanted into the area designated to have field oxide isolation to form the channel stop. The sidewall insulator structure is removed. The field oxide insulator structure is grown by subjecting the structure to oxidation whereby the channel stop is confined under the field oxide isolation and not encroaching the planned device regions.
REFERENCES:
patent: 4376336 (1983-03-01), Endo et al.
patent: 4829019 (1989-05-01), Mitchell et al.
patent: 4897364 (1990-01-01), Nguyen et al.
Lu Chih-Yuan
Tuan Hsiao-Chin
Dang Trung
Hearn Brian E.
Industrial Technology Research Institute
Saile George O.
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