Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2006-06-27
2006-06-27
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S001000, C134S003000, C134S006000, C134S026000, C134S028000, C134S034000, C216S108000, C216S109000, C438S690000, C438S745000, C438S906000, C510S175000
Reexamination Certificate
active
07067015
ABSTRACT:
A cleaning chemistry for lowering defect levels on the backside of a semiconductor wafer after chemical mechanical planarization (CMP). In a preferred embodiment of the present invention, a cleaning chemistry comprising nitric acid, hydrofluoric acid, and phosphoric acid in solution with deionized water is applied to the wafer surface to be cleaned preferably while subjected to megasonic assist cleaning. The wafer is preferably then subjected to brush scrubbing and a deionized water rinse with megasonic assist cleaning.
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W.Kern. Handbook of Semiconductor Wafer Cleaning Technology. Noyes Publications, 1993. pp. 136-142,144.
Chen Linlin
Xia Changfeng
Brady III W. James
Kornakov M.
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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