Modification of interfacial fields between dielectrics and semic

Details Modification of interfacial fields between dielectrics and semic Modification of interfacial fields between dielectrics and semic

1991-03-13

2000-09-12

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Field plate electrode

148DIG3, 148DIG24, 148DIG60, 257405, 257651, 438294, 438353, 438783, H01L 2131, H01L 2978

Patent

active

061177490

ABSTRACT:
Reduction in the net charge at the interface of a dielectric and a semiconductor material is achieved by placing atomic species in the dielectric near the interface. Preferably, these species are selected from the group of alkaline earth metals. The presence of these atoms results in a redistribution of the electronic density near the interface. The placement of the atoms is effected by ion implantation followed by multiple annealing steps at alternating low and high temperatures.

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