Modifiable gate stack memory element

Details Modifiable gate stack memory element Modifiable gate stack memory element

2011-03-29

2011-03-29

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S004000, C257S324000, C257S326000, C257S148000, C257S151000, C257S163000, C257SE31029

Reexamination Certificate

active

07915603

ABSTRACT:
An apparatus and method for storing information are provided, including using a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. The on-resistance of the transistor is changed by causing a non-charge-storage based physical change in the modifiable gate stack layer, to store information.

REFERENCES:
patent: 3361638 (1968-01-01), Bokros et al.
patent: 3692565 (1972-09-01), Lersmacher et al.
patent: 4077044 (1978-02-01), Hayashi
patent: 4262039 (1981-04-01), Gyarmati et al.
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 5086014 (1992-02-01), Miyata et al.
patent: 5211796 (1993-05-01), Hansen
patent: 5278431 (1994-01-01), Das
patent: 5294518 (1994-03-01), Brady et al.
patent: 5330630 (1994-07-01), Klersy et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5440507 (1995-08-01), Brady et al.
patent: 6139624 (2000-10-01), Rupp
patent: 6180444 (2001-01-01), Gates et al.
patent: 6194746 (2001-02-01), Gonzalez et al.
patent: 6235645 (2001-05-01), Habuka et al.
patent: 6392913 (2002-05-01), Sandhu
patent: 6565718 (2003-05-01), Chour et al.
patent: 6614048 (2003-09-01), Leuschner
patent: 6683322 (2004-01-01), Jackson et al.
patent: 6750469 (2004-06-01), Ichihara et al.
patent: 6903361 (2005-06-01), Gilton
patent: 6937505 (2005-08-01), Morikawa
patent: 7045175 (2006-05-01), Fujimaki et al.
patent: 7052757 (2006-05-01), Chaiken et al.
patent: 7186380 (2007-03-01), Chen et al.
patent: 7220982 (2007-05-01), Campbell
patent: 7268077 (2007-09-01), Hwang
patent: 7332262 (2008-02-01), Latchford et al.
patent: 7339811 (2008-03-01), Nejad et al.
patent: 7344946 (2008-03-01), Moore et al.
patent: 7433253 (2008-10-01), Gogl et al.
patent: 7453716 (2008-11-01), Kim et al.
patent: 7492635 (2009-02-01), Kim et al.
patent: 7539038 (2009-05-01), Lee et al.
patent: 7626190 (2009-12-01), Seidl
patent: 7692175 (2010-04-01), Pinnow et al.
patent: 2005/0127524 (2005-06-01), Sakamoto et al.
patent: 2005/0201143 (2005-09-01), Pinnow et al.
patent: 2005/0274942 (2005-12-01), Kozicki
patent: 2006/0038212 (2006-02-01), Moore et al.
patent: 2006/0152961 (2006-07-01), Kim et al.
patent: 2006/0256608 (2006-11-01), Chen et al.
patent: 2007/0045615 (2007-03-01), Cho et al.
patent: 2008/0070162 (2008-03-01), Ufert
patent: 2008/0099752 (2008-05-01), Kreupl et al.
patent: 2008/0101121 (2008-05-01), Kreupl
patent: 1466218 (2004-01-01), None
patent: 43 19 268 (1993-06-01), None
patent: 692 14 846 (1997-02-01), None
patent: 198 56 295 (2002-06-01), None
patent: 103 06 076 (2004-08-01), None
patent: 103 45 393 (2005-05-01), None
patent: 10 2004 011 363 (2005-09-01), None
patent: 0 269 225 (1988-06-01), None
patent: 0 457 508 (1991-11-01), None
patent: 0 519 472 (1992-12-01), None
patent: 0 714 136 (1996-05-01), None
patent: 1 892 722 (2008-02-01), None
patent: 5315595 (1993-11-01), None
patent: 2008-153624 (2008-07-01), None
patent: 10-2004-0111563 (2004-12-01), None
patent: 10-0630437 (2006-09-01), None
patent: WO 98/45847 (1998-10-01), None
patent: WO 2004/070735 (2004-08-01), None
patent: WO 2005/081296 (2005-09-01), None
Takai et al. Structure and electronic properties of a nongraphic disordered carbon system and its heat-treatment effects. Jun. 19, 2003. Physical Review B. vol. 67. pp. 214202-1 through 214202-11.
Kam, H., et al., “A New Nano-Electro-Mechnical Field Effect Transistor (NEMFET) Design for Low-Power Electronics,” IEEE, 2005, 4 pages.
Abele, N., et al., “Suspended-Gate MOSFET: Bringing New MEMS functionality into solid-state MOS transistor,” IEEE, 2005, 3 pages.
Liu, L., et al., “Controllable Reversibility of ansp2tosp3Transition of a Single Wall Nanotube under the Manipulation of an AFM Tip: A Nanoscale Electromechanical Switch?,” Physical Review Letters, vol. 84, No. 21, May 22, 2000, pp. 4950-4953.
McKenzie, D.R., et al., “Applications of tetrahedral amorphous carbon in limited volatility memory and in field programmable gate arrays,” Diamond and Related Materials, vol. 10, 2001, pp. 230-233.
Gerstner, E.G., “Bistability in a-C for memory and antifuse applications,”Properties of Amorphous Carbon, Section 10.3, Jun. 2001, pp. 318-323.
Argall, F., “Switching Phenomena in Titanium Oxide Thin Films,” Solid-State Electronics, 1968, pp. 535-541, vol. 11, Pergamon Press, Great Britain.
Baek, I.G., et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Uni-polar Voltage Pulses,” 2004, IEDM.
Bhattacharyya, S., et al., “Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures,” Jan. 2006, vol. 5, pp. 19-22, Nature Publishing Group, published online on Dec. 25, 2005 www.nature.com
aturematerials.
Gerstner, E.G., et al., “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films,” Journal of Applied Physics, Nov. 15, 1998, pp. 5647-5651, vol. 84, No. 10, American Institute of Physics.
Gibbons, J.F., et al., “Switching Properties of Thin NiO Films,” Solid-State Electronics, 1964, pp. 785-797, vol. 7, Pergamon Press, Great Britain.
Hiatt, W.R., et al., “Bistable Switching in Niobium Oxide Diodes,” Mar. 15, 1965, pp. 106-108, vol. 6, No. 6, Applied Physics Letters.
Savvides, N., “Four-fold to three-fold transistion in diamond-like amorphous carbon films: A study of optical and electrical properties,” Journal of Applied Physics, Jul. 1, 1985, vol. 58, No. 1, pp. 518-521.
Seo, S., et al., “Conductivity switching characteristics and reset currents in NiO films,” Applied Physics Letters, 2005, pp. 093509-1-093509-3, vol. 86, American Institute of Physics.
Seo, S., et al., “Reproducible resistance switching in polycrystalline NiO films,” Applied Physics Letters, Dec. 6, 2004, pp. 5655-5657, vol. 85, No. 23, American Institute of Physics.
Takai, K., et al., “Structure and electronic properties of a nongraphitic disordered carbon system and its heat-treatment effects,” Physical Review B, 2003, pp. 214202-1-214202-11, vol. 67, The American Physical Society.
Aichmayr, G., et al., “Carbon/high-k Trench Capacitor for the 40nm DRAM Generation,” Symposium on VLSI Technology Digest of Technical Papers, 2007, pp. 186-187.
Lu, W., et al., “Ohmic Contact Behavior of Carbon Films on S:C,” Journal of The Electrochemical Society, Jan. 23, 2003, pp. G177-G182.
Davanloo, F., et al., “Amorphic Diamond/Silicon Semiconductor Heterojunctions Exhibiting Photoconductive Characteristics,” Applied Physics Letters, American Institute of Physics, Sep. 18, 2000, vol. 77, No. 12, pp. 1837-1839.
Raghavan, G., et al., “Polycrystalline Carbon: A Novel Material for Gate Electrodes in MOS Technology,” Japan Journal of Applied Physics, Jan. 1993, pp. 380-383, vol. 32, Part 1, No. 1B.
Oberlin, A., “Pyrocarbons,” Elsevier Science Ltd., Carbon 40, May 15, 2001, pp. 7-24.

Affiliated with

Also associated with

Rating

Modifiable gate stack memory element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modifiable gate stack memory element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modifiable gate stack memory element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2632283