Modes of infrared hot electron transistor operation in infrared

Details Modes of infrared hot electron transistor operation in infrared Modes of infrared hot electron transistor operation in infrared

1993-06-25

1994-09-13

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Ballistic transport device

257462, 2503384, 307311, H01L 2714, H01L 3100

Patent

active

053471423

ABSTRACT:
A circuit incorporating an infrared hot electron transistor having a common base and biasing voltages. In one embodiment, the circuit is configured to take advantage of the photovoltage amplification capabilities of the infrared hot electron transistor. In another embodiment, the infrared hot electron transistor is configured to take advantage of the photovoltaic mode of operation of the infrared hot electron transistor. The present invention can therefore be used to directly replace a photodiode used in infrared detection. The present invention additionally provides an amplified output voltage and permits direct DC coupling to a high gain operational amplifier.

REFERENCES:
patent: 4010486 (1977-03-01), Suzuki
patent: 4862238 (1989-08-01), Shannon
patent: 4873555 (1989-10-01), Coon et al.
patent: 4894526 (1990-01-01), Bethea et al.
patent: 5013918 (1991-05-01), Choi
patent: 5031013 (1991-07-01), Choi
K. Choi, "10 Micrometer infrared hot-electron transistors", Applied Physics etters, vol. 57, (1990), pp. 1348-1350.

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