Model-based SRAF insertion

Details Model-based SRAF insertion Model-based SRAF insertion

2005-09-30

2011-10-11

Siek, Vurthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Design of semiconductor mask or reticle

Analysis and verification

Reexamination Certificate

active

08037429

ABSTRACT:
A system for producing mask layout data retrieves target layout data defining a pattern of features, or portion thereof and an optimized mask layout pattern that includes a number of printing and non-printing features. Mask layout data for one or more subresolution assist features (SRAFs) is then defined to approximate one or more non-printing features of the optimized mask layout pattern.

REFERENCES:
patent: 4532650 (1985-07-01), Wihl et al.
patent: 4762396 (1988-08-01), Dumant et al.
patent: 4989156 (1991-01-01), Ikenaga
patent: 5396584 (1995-03-01), Lee et al.
patent: 5502654 (1996-03-01), Sawahata
patent: 5655110 (1997-08-01), Krivokapic et al.
patent: 5699447 (1997-12-01), Alumot et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5886908 (1999-03-01), Conn et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 6016357 (2000-01-01), Neary et al.
patent: 6042257 (2000-03-01), Tsudaka
patent: 6049660 (2000-04-01), Ahn et al.
patent: 6056785 (2000-05-01), Chisaka
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6080527 (2000-06-01), Huang et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6128067 (2000-10-01), Hashimoto
patent: 6187483 (2001-02-01), Capodieci et al.
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249904 (2001-06-01), Cobb
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6301697 (2001-10-01), Cobb
patent: 6312854 (2001-11-01), Chen et al.
patent: 6317859 (2001-11-01), Papadopoulou
patent: 6370679 (2002-04-01), Chang et al.
patent: 6416907 (2002-07-01), Winder et al.
patent: 6425117 (2002-07-01), Pasch et al.
patent: 6430737 (2002-08-01), Cobb et al.
patent: 6453452 (2002-09-01), Chang et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6467076 (2002-10-01), Cobb
patent: 6470489 (2002-10-01), Chang et al.
patent: 6499003 (2002-12-01), Jones et al.
patent: 6574784 (2003-06-01), Lippincott et al.
patent: 6620561 (2003-09-01), Winder et al.
patent: 6643616 (2003-11-01), Granik et al.
patent: 6649309 (2003-11-01), Mukherjee
patent: 6665845 (2003-12-01), Aingaran et al.
patent: 6668367 (2003-12-01), Cobb et al.
patent: 6728946 (2004-04-01), Schellenberg et al.
patent: 6748578 (2004-06-01), Cobb
patent: 6792159 (2004-09-01), Aufrichtig et al.
patent: 6792590 (2004-09-01), Pierrat et al.
patent: 6815129 (2004-11-01), Bjorkholm et al.
patent: 6817003 (2004-11-01), Lippincott et al.
patent: 6851103 (2005-02-01), Van Den Broeke et al.
patent: 6857109 (2005-02-01), Lippincott
patent: 6887633 (2005-05-01), Tang
patent: 6901576 (2005-05-01), Liebmann et al.
patent: 6928634 (2005-08-01), Granik et al.
patent: 6973633 (2005-12-01), Lippincott et al.
patent: 7010776 (2006-03-01), Gallatin et al.
patent: 7013439 (2006-03-01), Robles et al.
patent: 7024655 (2006-04-01), Cobb
patent: 7028284 (2006-04-01), Cobb et al.
patent: 7047516 (2006-05-01), Futatsuya
patent: 7073162 (2006-07-01), Cobb et al.
patent: 7155689 (2006-12-01), Pierrat et al.
patent: 7155699 (2006-12-01), Cobb
patent: 7172838 (2007-02-01), Maurer et al.
patent: 7181721 (2007-02-01), Lippincott et al.
patent: 7237221 (2007-06-01), Granik et al.
patent: 7240305 (2007-07-01), Lippincott
patent: 7240321 (2007-07-01), Cobb et al.
patent: 7247574 (2007-07-01), Van Den Broeke et al.
patent: 7266803 (2007-09-01), Chou et al.
patent: 7281234 (2007-10-01), Lippincott
patent: 7293249 (2007-11-01), Robles et al.
patent: 7324930 (2008-01-01), Cobb
patent: 7367009 (2008-04-01), Cobb et al.
patent: 7487489 (2009-02-01), Granik
patent: 7493587 (2009-02-01), Word
patent: 7552416 (2009-06-01), Granik et al.
patent: 2002/0199157 (2002-12-01), Cobb
patent: 2003/0170551 (2003-09-01), Futatsuya
patent: 2004/0005089 (2004-01-01), Robles et al.
patent: 2004/0044431 (2004-03-01), Pellegrini et al.
patent: 2004/0088149 (2004-05-01), Cobb
patent: 2005/0050490 (2005-03-01), Futatsuya et al.
patent: 2005/0053848 (2005-03-01), Wampler et al.
patent: 2005/0149900 (2005-07-01), Laidig
patent: 2005/0149901 (2005-07-01), Tang
patent: 2005/0251771 (2005-11-01), Robles
patent: 2005/0278686 (2005-12-01), Word et al.
patent: 2006/0188796 (2006-08-01), Word
patent: 2006/0199084 (2006-09-01), Word
patent: 2006/0240342 (2006-10-01), Tang
patent: 2006/0269875 (2006-11-01), Granik
patent: 2007/0006113 (2007-01-01), Hu et al.
patent: 2007/0074143 (2007-03-01), Cobb et al.
patent: 2007/0118826 (2007-05-01), Lippincott
patent: 2007/0124708 (2007-05-01), Robles et al.
patent: 2007/0198963 (2007-08-01), Granik et al.
patent: 2008/0141195 (2008-06-01), Robles et al.
patent: 2008/0193859 (2008-08-01), Hamouda
patent: 09319067 (1997-12-01), None
patent: 2004-502961 (2004-01-01), None
patent: WO 99/14637 (1999-03-01), None
patent: WO 99/14638 (1999-03-01), None
patent: WO 01/65315 (2001-09-01), None
patent: WO 2007/041135 (2007-04-01), None
Socha et al., “Contact Hole Reticle Optimization by Using Interference Mapping Lithography (IML™)”, Proceedings of SPIE, vol. 5446, pp. 516-534 (2004).
Oh et al., “Resolution Enhancement Through Optical Proximity Correction and Stepper Parameter Optimization for 0.12μm Mask Pattern”, SPIE Conference on Optical Microlithography XII, SPIE vol. 3679, pp. 607-613 (1999).
Chang et al., “A computational method for the correction of proximity effect inelectron-beam lithography”, SPIE vol. 1671, pp. 208-214 (1992).
Broeke et al. “Near 0.3 k1 Full Pitch Range Contact Hole Patterning Using Chromeless Phase Lithography (CPL)”, 23rdAnnual BACUS Symposium on Photomask Technology, Proceedings of SPIE vol. 5256, pp. 297-308, Dec. 17, 2003.
Chen, J. Fung, et al., “RET Masks for the Final Frontier of Optical Lithography,”Proceedings of the SPIE, vol. 5853, Bellingham, Washington, 2005, pp. 168-179.
International Search Report, International Application No. PCT/US2006/037603, International Filing Date Sep. 25, 2006.
Written Opinion of the International Searching Authority, International Application No. PCT/US2006/037603, International Filing Date Sep. 25, 2006.
Cobb, N., “Flexible Sparse and Dense OPC Algorithms,”Proceedings of SPIE, vol. 5853:Photomask and Next-Generation Lithography Mask Technology XII, Yokohama, Japan, Apr. 13, 2005, pp. 693-702.
Cobb, N., and Y. Granik, “Model-Based OPC Using the MEEF Matrix,”Proceedings of SPIE, vol. 4889:22nd Annual BACUS Symposium on Photomask Technology, Monterey, Calif., Oct. 4, 2002, pp. 1281-1292.
Cobb, N., and A. Zakhor, “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model,”Proceedings of SPIE, vol. 3051:Symposium on Optical Microlithography X, Santa Clara, Calif, Mar. 12, 1997, pp. 458-468.
Cobb, N., and A. Zakhor, “Fast, Low-Complexity Mask Design,”Proceedings of SPIE, vol. 2440:Symposium on Optical/Laser Microlithography VIII, Santa Clara, Calif., Feb. 24, 1995, pp. 313-327.
Cobb, N., and A. Zakhor, “Fast Sparse Aerial Image Calculation for OPC,”Proceedings of SPIE, vol. 2621:15th Annual BACUS Symposium on Photomask Technology and Management, Santa Clara, Calif, Sep. 20-22, 1995, pp. 534-545.
Cobb, N., and A. Zakhor, “Large Area Phase-Shift Mask Design,”Proceedings of SPIE, vol. 2197:Symposium on Optical/Laser Microlithography VII, San Jose, Calif., Mar. 2-4, 1994, pp. 348-360.
Cobb, N., et al., “Mathematical and CAD Framework for Proximity Correction,”Proceedings of SPIE, vol. 2726:Symposium on Optical Microlithography IX, Santa Clara, Calif., Mar. 13-15, 1996, pp. 208-222.
Cobb, N., and Y. Granik, “Using OPC to Optimize for Image Slope and Improve Process Window,” (document labeled Nov. 20, 2002),Proceedings of SPIE, vol. 5130:Photomask and Next-Generation Lithography Mask Technology X, Yokohama, Japan, Apr. 16, 2003, pp. 838-846.
Granik, Y., “Source Optimization for Image Fidelity and Throughput, ”Journal of Microlithography, Microfabrication, and Micros

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