Mode stabilized semiconductor laser

Details Mode stabilized semiconductor laser Mode stabilized semiconductor laser

1979-10-29

1981-12-08

Davie, James W.

Oscillators

Molecular or particle resonant type

357 16, 357 17, H01S 319

Patent

active

043050484

ABSTRACT:
Longitudinal mode control is achieved in a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a deep level electron or hole trap. The trap is chosen to have a carrier capture cross section .sigma..sub.e and an optical cross section .sigma..sub.o such that the ratio of P, the average number of photons per cubic centimeter, to P.sub.s is between 0.1 and 100 where P.sub.s is equal to (N.sigma..sub.e V/.sigma..sub.o C.sub.o), N is the carrier density, V is the carrier thermal velocity, and C.sub.o is the speed of light in the material. In a specific embodiment the active region is bombarded by photons to achieve deep level electron traps in the active region.

REFERENCES:
patent: 3654497 (1972-04-01), Dyment et al.
patent: 3758875 (1973-09-01), Hayashi
patent: 4055815 (1977-10-01), Smith
patent: 4132960 (1979-01-01), Streifer
patent: 4158207 (1979-06-01), Bishop et al.
Nakamura et al., "Longitudinal-mode Behaviors of Mode-stabilized Al.sub.x Ga.sub.1-x As Injection Lasers", J. Applied Physics, vol. 49, No. 9, Sep. 1978, pp. 4644-4648.

Affiliated with

Also associated with

Rating

Mode stabilized semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mode stabilized semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mode stabilized semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-569973