Mode-locked semiconductor laser with tunable external cavity

Details Mode-locked semiconductor laser with tunable external cavity Mode-locked semiconductor laser with tunable external cavity

1981-11-06

1984-05-01

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 18, 372 20, 372 92, 372 19, 372 48, 372 43, 357 17, H01S 319

Patent

active

044465572

ABSTRACT:
A mode-locked gallium arsenide crystal laser has a cavity length equal to one-half its principal noise resonance wavelength and an electrode overlying a portion of the crystal, the remaining portion being a self-aligned region diffused or implanted with impurities comprising saturable absorbing centers. An anti-reflective coating is placed on a crystal facet facing an external mirror defining one end of the laser cavity. The resulting laser has improved power, frequency and temporal stability.

REFERENCES:
patent: 4132960 (1979-01-01), Streifer et al.
patent: 4162460 (1979-07-01), Gonda
patent: 4305048 (1981-12-01), Copeland

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