MOCVD system for forming superconducting thin films

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

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505730, 505732, C23C 1600

Patent

active

054475694

ABSTRACT:
A system for MOCVD fabrication of superconducting oxide thin films provides a feed tube having a narrow slot along its length with a uniform mixture of powdered precursor materials packed inside the tube. The mixture composition is such that the resulting film has the desired stoichiometry. The tube moves downward at a controlled rate past a bank of heating lamps surrounded by a heat reflector. At each position of the tube this structure heats a localized section of the precursor material, with a sharp temperature gradient at the boundary of the section so that the heating is confined to this section. The precursor material in the heated section is substantially completely vaporized, with negligible decomposition and nonvolatile residue formation, and the vaporization rate is governed by the downward velocity of the tube. The vaporized material escapes through the longitudinal slot, and is swept by a carrier gas into a reaction zone. Oxygen is mixed with the gas stream, and the reaction products are deposited as a thin film on the substrate. A modification of this system includes coils adjacent to the reaction zone, connected to an rf generator. These coils produce a plasma in the reagent gas mixture that enhances the chemical reaction.

REFERENCES:
patent: 4854264 (1989-08-01), Noma
patent: 5204314 (1993-04-01), Kirlin
W. J. Lackey, et al., "Rapid Vapor Deposition of Superconducting YBa.sub.2 Cu.sub.2 Ox", 19 Mar. 1990, Applied Physics Letters 56 (12).
H. Yamane, et al., "Preparation of Superconducting-Oxide Films by CVD and Their Properties", May, 1989, Journal de Physique, Collgue C5.
A. Erbil, K. Zhang, B. S. Kwak and E. P. Boyd, "A Review of Metalorganic Chemical Vapor Deposition of High-Temperature Superconducting Thin Films", School of Physics, Georgia Tech.

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