MOCVD processes using precursors based on organometalloid ligand

Details MOCVD processes using precursors based on organometalloid ligand MOCVD processes using precursors based on organometalloid ligand

1999-05-19

2000-08-08

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427123, 427124, 427125, C23C 1618, C23C 1606

Patent

active

060999039

ABSTRACT:
Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.

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patent: 5840897 (1998-11-01), Kirlin et al.
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