MOCVD of semi-insulating indium phosphide based compositions

Fishing – trapping – and vermin destroying

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437 94, 437 5, 437 40, 156613, 156614, 357 17, 357 22, H01L 736, H01L 21205, H01L 2184

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047161302

ABSTRACT:
It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.

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C. C. Hsu et al., "OMVPE Growth of InP Using TMIn", J. Cryst. Growth, No. 63 (1983), pp. 8-12.
R. H. Moss et al., "A New Approach to MOCVD of Indium . . . 38 , J. Cryst. Growth, No. 55 (1981), pp. 129-134.
Bass et al, "MOVPE of InP", J. Crystal Growth 64 (1983), 68-75.
Alferov et al, "Buried InGaAsP/InP Stripe Heterojunction CW Lasers Fabricated by Combined Liquid and Gas Phase Epitaxy", Sov. Tech., Phys. Lett. 8(6), Jun. 1982.

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